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| Product Bulletin OPB817 February 2001 Slotted Optical Switch Type OPB817 Features *.20"(5.08 mm) wide gap *24"minimum, 26 AWG wire leads *Dust protection *.86"(21.8 mm) deep slot Description The OPB817 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The extended deep slot allows for a longer reach of the optical center line from the mounting plane, .90" (22.86 mm). Internal apertures are .010" x 0.06"for the phototransistor " side" and .050"x S .06" for the LED " side" E . Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information. Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40C to +80C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse DC Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Phototransistor Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) NOTES: (1) Derate lin early 1.67 mW/C above 25C. (2) All parameters tested using pulse technique. (3) Clear dust protection. Visit our website at www.optekinc.com or email us at sensors@optekinc.com PRECAUTIONS: Exposure of the plastic body to chlorinated hy drocarbons and ketones such as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents methanol and isopropanol are recommended. Spray or wipe do not submerge. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 29 (972) 323-2200 Fax (972) 323-2396 Type OPB817 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO V(BR)ECO I CEO Coupled IC(ON) VCE(SAT) On-State Collector Current Collector-Emitter Saturation Voltage 1.0 10 0.40 mA V VCE = 5.0, IF = 20 mA IC = 100 A, I F = 20 mA Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current 30 5.0 100 1.8 100 V A V V nA IF = 20 mA VR = 2 V IC = 1 mA, I F = 0, E e = 0 IE = 100 A, I F = 0, Ee = 0 VCE = 10 V, IF = 0, Ee = 0 PARAMETER MIN MAX UNITS TEST CONDITIONS Phototransistor Optek re serves the right to make changes at any time in order to improve design and to supply the best product possi ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 30 |
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